advanced power n-channel enhancement mode electronics corp. power mosfet lower gate charge bv dss 20v gate pateded diode r ds(on) 0.9 small package outline i d 450ma rohs compliant & halogen-free description absolute maximum ratings symbol unit v ds v v gs v i d @t a =25 ma i d @t a =70 ma i dm a p d @t a =25 w t stg t j symbol value unit rthj-a maximum thermal resistance, junction-ambient 3 420 /w data and specifications subject to change without notice AP1332GEV-HF parameter rating halogen-free product drain-source voltage 20 gate-source voltage + 6 continuous drain current 3 450 continuous drain current 3 360 pulsed drain current 1 1 total power dissipation 0.35 1 -55 to 150 operating junction temperature range -55 to 150 201204252 thermal data parameter storage temperature range g d s advanced power mosfets from apec provide the designer with the best combination of fast switching, low on-resistance and cost- effectiveness. sc-75 with 1.6x1.6mm very small footprint and suited for hand held applications. d g s sc-75
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. unit bv dss drain-source breakdown voltage v gs =0v, i d =250ua 20 - - v r ds(on) static drain-source on-resistance 2 v gs =4.5v, i d =400ma - - 0.9 v gs =2.5v, i d =300ma - - 2 v gs =1.8v, i d =200ma - - 3 v gs(th) gate threshold voltage v ds =v gs , i d =250ua 0.25 - 1 v g fs forward transconductance v ds =5v, i d =400ma - 1.3 - s i dss drain-source leakage current v ds =16v, v gs =0v - - 10 ua i gss gate-source leakage v gs =+ 6v, v ds =0v - - + 30 ua q g total gate charge i d =400ma - 1.2 1.9 nc q gs gate-source charge v ds =10v - 0.3 - nc q gd gate-drain ("miller") charge v gs =4.5v - 0.3 - nc t d(on) turn-on delay time v ds =10v - 18 - ns t r rise time i d =400ma - 34 - ns t d(off) turn-off delay time r g =3.3 - 110 - ns t f fall time v gs =5v - 115 - ns c iss input capacitance v gs =0v - 45 72 pf c oss output capacitance v ds =10v - 22 - pf c rss reverse transfer capacitance f=1.0mhz - 12 - pf source-drain diode symbol parameter test conditions min. typ. max. unit v sd forward on voltage 2 i s =300ma, v gs =0v - - 1.2 v notes: 1.pulse width limited by max. junction temperature. 2.pulse test. 3.surface mounted on fr4 board. this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. AP1332GEV-HF 2
a p1332gev-hf fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 1 2 3 4 0123456 v ds , drain-to-source voltage (v) i d , drain current (a) t a =25 o c 5.0v 4.5v 3.5v 2.5v v g = 1.8v 0.0 0.8 1.6 2.4 3.2 0123456 v ds , drain-to-source voltage (v) i d , drain current (a) t a = 150 o c 5.0v 4.5v 3.5v 2.5v v g = 1.8v 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =0.4a v g =4.5v 0 0.4 0.8 1.2 1.6 2 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th) 0 0.4 0.8 1.2 1.6 2 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 200 400 600 800 1000 1200 0123456 v gs , gate-to-source voltage (v) r ds(on) (m ) i d = 0.2 a t a =25 o c i d =250ua
AP1332GEV-HF fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. transfer characteristics fig 12. maximum continuous drain current v.s. ambient temperature 4 0 1 2 3 4 5 0.0 0.4 0.8 1.2 1.6 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =0.4a v ds =10v 0 20 40 60 80 15913172125 v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r thja ) p dm duty factor = t/t peak t j = p dm x r thja + t a t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 0.01 0.1 1 10 0.01 0.1 1 10 100 v ds , drain-to-source voltage (v) i d (a) t a =25 o c single pulse 100us 1ms 10ms 100ms 1s dc 0 1 2 3 4 012345 v gs , gate-to-source voltage (v) i d , drain current (a) t j =150 o c t j =25 o c v ds =5v t j =-40 o c operation in this area limited by r ds(on) 0 0.1 0.2 0.3 0.4 0.5 0.6 25 50 75 100 125 150 t a , ambient temperature ( o c ) i d , drain current (a)
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